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R8120S3S - ISL9R8120S3S

General Description

The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications.

The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.

Key Features

  • Soft Recovery.
  • . . . . tb / ta > 5.5.
  • Fast Recovery.
  • trr < 32ns.
  • Operating Temperature.
  • 150oC.
  • Reverse Voltage.
  • . 1200V.
  • Avalanche Energy Rated.

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ISL9R8120P2 / ISL9R8120S3S May 2002 ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth™ Diode General Description The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry.