P16N25 - FQP16N25

Fairchild Semiconductor

Datasheet Details

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

16 A, 250 V, RDS(on) = 230 mΩ (Max. ) @ VGS = 10 V, ID = 8.0 A.
Low Gate Charge (Typ. 27 nC).
Low Crss (Typ. 23 pF).
100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche.

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