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P10N60C FQP10N60C

P10N60C Description

FQP10N60C / FQPF10N60C 600V N-Channel MOSFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET April 2007 QFET ® .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

P10N60C Features

* 9.5A, 600V, RDS(on) = 0.73Ω @VGS = 10 V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested

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FQP10N60C Fairchild Semiconductor
Fairchild Semiconductor P10N60C-like datasheet