NZT605 Datasheet (Fairchild Semiconductor)

NZT605, NPN Darlington Transistor

NZT605 NPN Darlington Transistor January 2007 NZT605 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage.

Sourced from process 06.

4 3 2 1 SOT-223 1.

Base 2.4.

Collector 3.

Emitter Absolute Maximum Ratings T Symbol VCEO VCBO VEBO www.DataSheet4U.com C = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Col