KSD1944 Datasheet (Fairchild Semiconductor) - High Gain Power Transistor

KSD1944, High Gain Power Transistor

KSD1944 KSD1944 High Gain Power Transistor 1 TO-220F 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (TC=25°C) Junction Temperature Storage Temperature Value 80 60 8 3 30 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol