IRFS610A - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFS610A
Manufacturer	Fairchild ↗ Semiconductor
File Size	254.99 KB
Description	Power MOSFET
Datasheet	IRFS610A-FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V Low RDS(ON) : 1.169 Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 oC) Continuous Drain Current (TC=100 oC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Aval.

📁 IRFS610A Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Aug 3, 2016 |