IRFR120A - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFR120A
Manufacturer	Fairchild Semiconductor
File Size	256.26 KB
Description	Power MOSFET
Datasheet	IRFR120A_FairchildSemiconductor.pdf

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V Lower RDS(ON) : 0.155 Ω (Typ. ) IRFR/U120A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 8.4 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C).

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Published: Sep 28, 2005 |