IRFP350 - Power MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFP350
Manufacturer	Fairchild Semiconductor
File Size	231.17 KB
Description	Power MOSFET
Datasheet	IRFP350-FairchildSemiconductor.pdf

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 400V.
Low RDS(ON): 0.254Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1).

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Published: Aug 4, 2016 |