IRFI650B - 200V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	IRFI650B
Manufacturer	Fairchild ↗ Semiconductor
File Size	673.28 KB
Description	200V N-Channel MOSFET
Datasheet	IRFI650B_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

28A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
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G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Conti.

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Published: Apr 16, 2005 |