IRF9530 Datasheet - Fairchild Semiconductor

IRF9530 P-Channel Power MOSFETs

Data Sheet IRF9530, RF1S9530SM January 2002 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar sw.

IRF9530 Features

* 12A, 100V

* rDS(ON) = 0.300Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334, “Guidelines fo

IRF9530 Datasheet (103.01 KB)

IRF9530 Datasheet Preview — Preview of IRF9530 PDF

Datasheet Details

Part number:

IRF9530

Manufacturer:

Fairchild Semiconductor

File Size:

103.01 KB

Description:

P-channel power mosfets.

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IRF9530 P-Channel Power MOSFETs Fairchild Semiconductor

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