FQU2N90 Datasheet (Fairchild Semiconductor)

FQU2N90, 900V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQU2N90 Features

* 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, ID = 0.85 A

* Low Gate Charge (Typ. 12 nC)

* Low Crss (Typ. 5.5 pF)

* 100% Avalanche Tested

* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Sy