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FQU2N90 900V N-Channel MOSFET

FQU2N90 Description

FQD2N90 / FQU2N90 * N-Channel QFET® MOSFET FQD2N90 / FQU2N90 N-Channel QFET® MOSFET 900 V, 1.7 A, 7.2 Ω January 2014 .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

FQU2N90 Features

* 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max. ) @ VGS = 10 V, ID = 0.85 A
* Low Gate Charge (Typ. 12 nC)
* Low Crss (Typ. 5.5 pF)
* 100% Avalanche Tested
* RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Sy

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900V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQU2N90-like datasheet