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FQU19N10 100V N-Channel MOSFET

FQU19N10 Description

FQD19N10 / FQU19N10 August 2000 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQU19N10 Features

* 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Abs

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100V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQU19N10-like datasheet