FQT4N20 Datasheet (Fairchild Semiconductor)

FQT4N20, 200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQT4N20 Features

* 0.85A, 200V, RDS(on) = 1.4Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 5.0 pF) Fast switching Improved dv/dt capability D ! D " S G G! ! " " " SOT-223 FQT Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS