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FQT3P20 - 200V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -0.67A, -200V, RDS(on) = 2.7Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.5 pF) Fast switching Improved dv/dt capability S ! D G! S G.
  • ▶ ▲.
  • SOT-223 FQT Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 70°C) Drain Current - Pulsed (Note.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQT3P20 May 2001 QFET FQT3P20 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. TM Features • • • • • -0.67A, -200V, RDS(on) = 2.7Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 7.
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