FQPF9P25 Datasheet (Fairchild Semiconductor)

FQPF9P25, 250V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQPF9P25 Features

* -6 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -3 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 27 pF)

* 100% Avalanche Tested S G GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD