FQPF9P25 - 250V P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQPF9P25
Manufacturer	Fairchild Semiconductor
File Size	1.19 MB
Description	250V P-Channel MOSFET
Datasheet	FQPF9P25 Datasheet
Additional preview pages of the FQPF9P25 datasheet.

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

-6 A, -250 V, RDS(on) = 620 mΩ (Max. ) @ VGS = -10 V, ID = -3 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 27 pF).
100% Avalanche Tested S G GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche C.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |