FQPF9N90C, FQP9N90C - 900V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF9N90C, FQP9N90C
Manufacturer	Fairchild Semiconductor
File Size	1.06 MB
Description	900V N-Channel MOSFET
Datasheet	FQP9N90C-FairchildSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: FQPF9N90C, FQP9N90C. Please refer to the document for exact specifications by model.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

8 A, 900 V, RDS(on) = 1.4 Ω (Max. ) @ VGS = 10 V, ID = 4 A.
Low Gate Charge (Typ. 45 nC).
Low Crss (Typ. 14 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Curr.

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Published: Jun 9, 2014 |