FQPF8N80C - 800V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF8N80C
Manufacturer	Fairchild Semiconductor
File Size	1.10 MB
Description	800V N-Channel MOSFET
Datasheet	FQPF8N80C_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

8.0 A, 800 V, RDS(on) = 1.55 Ω (Max. ) @ VGS = 10 V, ID = 4.0 A.
Low Gate Charge (Typ. 35 nC).
Low Crss (Typ. 13 pF).
100% Avalanche Tested D GDS TO-220 GDS D G TO-220F S G TO-220F Y-formed Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Conti.

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Published: Apr 1, 2005 |