FQPF7N60 - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF7N60
Manufacturer	Fairchild Semiconductor
File Size	454.68 KB
Description	600V N-Channel MOSFET
Datasheet	FQPF7N60_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

4.3 A, 600 V, RDS(on) = 1.0 Ω (Max. ) @ VGS = 10 V, ID = 2.2 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 16 pF).
100% Avalanche Tested D GDS TO-220F G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Vol.

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Published: Apr 1, 2005 |