FQPF4N90C, FQP4N90C - 900V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQPF4N90C, FQP4N90C
Manufacturer	Fairchild Semiconductor
File Size	1.18 MB
Description	900V N-Channel MOSFET
Datasheet	FQP4N90C_FairchildSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: FQPF4N90C, FQP4N90C. Please refer to the document for exact specifications by model.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

4.0 A, 900 V, RDS(on) = 4.2 Ω (Max. ) @ VGS = 10 V, ID = 2.0 A.
Low Gate Charge (Typ. 17 nC).
Low Crss (Typ. 5.6 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100.

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Published: May 20, 2008 |