FQPF19N10 - 100V N-Channel MOSFET

Fairchild Semiconductor

The FQPF19N10 by Fairchild Semiconductor is a 100V N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	FQPF19N10
Manufacturer	Fairchild Semiconductor
File Size	1.30 MB
Description	100V N-Channel MOSFET
Datasheet	FQPF19N10_FairchildSemiconductor.pdf
Additional preview pages of the FQPF19N10 datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

13.6 A, 100 V, RDS(on)=100 mΩ(Max. ) @VGS=10 V, ID=6.8 A.
Low Gate Charge (Typ. 19 nC).
Low Crss (Typ. 32 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-So.

📁 FQPF19N10 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |