FQPF17N40 Datasheet (Fairchild Semiconductor)

FQPF17N40, 400V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQPF17N40 Features

* 9.5 A, 400 V, RDS(on) = 270 mΩ (Max.) @ VGS = 10 V, ID = 4.75 A

* Low Gate Charge (Typ. 45 nC)

* Low Crss (Typ. 30 pF)

* 100% Avalanche Tested D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.

* 6 6

* = 6 =