FQP9P25 Datasheet (Fairchild Semiconductor)

FQP9P25, 250V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQP9P25 Features

* -9.4 A, -250 V, RDS(on) = 0.62 Ω (Max.)@VGS = -10 V, ID = -4.7 A

* Low gate charge ( typ. 29 nC)

* Low Crss ( typ. 27 pF)

* 100% avalanche tested S G GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt