FQP8P10 - 100V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP8P10
Manufacturer	Fairchild Semiconductor
File Size	662.86 KB
Description	100V P-Channel MOSFET
Datasheet	FQP8P10_FairchildSemiconductor.pdf

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

-8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G G DS TO-220 FQP Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -.

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Published: Apr 1, 2005 |