FQP65N06

The FQP65N06 is 60V N-Channel MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Part number	FQP65N06
Manufacturer	Fairchild Semiconductor
File Size	661.14 KB
Description	60V N-Channel MOSFET
Datasheet	FQP65N06_FairchildSemiconductor.pdf
Additional preview pages of the FQP65N06 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 100 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Dr.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |