FQP2N60C - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP2N60C
Manufacturer	Fairchild Semiconductor
File Size	1.42 MB
Description	600V N-Channel MOSFET
Datasheet	FQP2N60C_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

2 A, 600 V, RDS(on) = 4.7 Ω (Max. ) @ VGS = 10 V, ID = 1 A.
Low Gate Charge (Typ. 8.5 nC).
Low Crss (Typ. 4.3 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-.

📁 FQP2N60C Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: Apr 1, 2005 |