FQP17P06 - 60V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP17P06
Manufacturer	Fairchild Semiconductor
File Size	452.56 KB
Description	60V P-Channel MOSFET
Datasheet	FQP17P06_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

- 17 A, - 60 V, RDS(on) = 120 m (Max. ) @ VGS = - 10 V, ID = - 8.5 A.
Low Gate Charge (Typ.21 nC).
Low Crss (Typ. 80 pF).
100% Avalanche Tested.
175C Maximum Junction Temperature Rating S  G D S TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note.

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Published: Apr 1, 2005 |