FQP15P12 - 120V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP15P12
Manufacturer	Fairchild Semiconductor
File Size	0.98 MB
Description	120V P-Channel MOSFET
Datasheet	FQP15P12_FairchildSemiconductor.pdf

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

-15 A, -120 V, RDS(on) = 0.2 Ω (Max. ) @ VGS=-10 V, ID = -7.5 A.
Low Gate Charge (Typ. 29 nC).
Low Crss (Typ. 110 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating S G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous.

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Published: Apr 1, 2005 |