FQP15P12 Datasheet (Fairchild Semiconductor)

FQP15P12, 120V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQP15P12 Features

* -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A

* Low Gate Charge (Typ. 29 nC)

* Low Crss (Typ. 110 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating S G GDS TO-220 GDS TO-220F Absolute Maximum Ratings TC = 25°C unl