FQP13N50C - N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP13N50C
Manufacturer	Fairchild Semiconductor
File Size	1.07 MB
Description	N-Channel MOSFET
Datasheet	FQP13N50C_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

13 A, 500 V, RDS(on) = 480 mΩ (Max. ) @ VGS = 10 V, ID = 6.5 A.
Low Gate Charge (Typ. 43 nC).
Low Crss (Typ. 20 pF).
100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25.

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Published: Apr 1, 2005 |