FQP11P06 - 60V P-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQP11P06
Manufacturer	Fairchild Semiconductor
File Size	0.97 MB
Description	60V P-Channel MOSFET
Datasheet	FQP11P06_FairchildSemiconductor.pdf

These P-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

-11.4 A, -60 V, RDS(on) = 175 mΩ (Max. ) @ VGS = -10 V, ID = -5.7 A.
Low Gate Charge (Typ. 13 nC).
Low Crss (Typ. 45 pF).
100% Avalanche Tested.
175oC Maximum Junction Temperature Rating S G GDS TO-220 Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note.

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Published: Apr 1, 2005 |