FQI9P25 Datasheet (Fairchild Semiconductor)

FQI9P25, 250V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in th

FQI9P25 Features

* -9.4A, -250V, RDS(on) = 0.62Ω @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 27 pF) Fast switching 100% avalanche tested Improved dv/dt capability D S !

* G! G S ▶ ▲

* D2-PAK FQB Series G D S I2-PAK FQ