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FQI6N80 800V N-Channel MOSFET

FQI6N80 Description

FQB6N80 / FQI6N80 September 2000 QFET FQB6N80 / FQI6N80 800V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI6N80 Features

* 5.8A, 800V, RDS(on) = 1.95Ω @VGS = 10 V Low gate charge ( typical 31 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! 3 " " 5 D2-PAK FQB Series G D S I2-PAK FQI Series !

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Datasheet Details

Part number
FQI6N80
Manufacturer
Fairchild Semiconductor
File Size
683.56 KB
Datasheet
FQI6N80_FairchildSemiconductor.pdf
Description
800V N-Channel MOSFET

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800V N-Channel MOSFET Fairchild Semiconductor
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