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FQI6N60 600V N-Channel MOSFET

FQI6N60 Description

FQB6N60 / FQI6N60 April 2000 QFET FQB6N60 / FQI6N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI6N60 Features

* 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S

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Datasheet Details

Part number
FQI6N60
Manufacturer
Fairchild Semiconductor
File Size
547.21 KB
Datasheet
FQI6N60_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET Fairchild Semiconductor
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