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FQI4N90 - 900V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max. ) @ VGS = 10 V, ID = 2.1 A.
  • Low Gate Charge (Typ. 24 nC).
  • Low Crss (Typ. 9.5 pF).
  • 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanc.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQI4N90 — N-Channel QFET® MOSFET FQI4N90 N-Channel QFET® MOSFET 900 V, 4.2 A, 3.3 Ω November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 4.2 A, 900 V, RDS(on) = 3.3 Ω (Max.) @ VGS = 10 V, ID = 2.1 A • Low Gate Charge (Typ. 24 nC) • Low Crss (Typ. 9.5 pF) • 100% Avalanche Tested D GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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