Datasheet4U Logo Datasheet4U.com

FQI3N60 600V N-Channel MOSFET

FQI3N60 Description

FQB3N60 / FQI3N60 April 2000 QFET FQB3N60 / FQI3N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI3N60 Features

* 3.0A, 600V, RDS(on) = 3.6Ω @VGS = 10 V Low gate charge ( typical 10 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series !

📥 Download Datasheet

Preview of FQI3N60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
FQI3N60
Manufacturer
Fairchild Semiconductor
File Size
581.82 KB
Datasheet
FQI3N60_FairchildSemiconductor.pdf
Description
600V N-Channel MOSFET

📁 Related Datasheet

  • FQI1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)
  • FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQI5N60C - N-Channel MOSFET (ON Semiconductor)
  • FQI7N60 - N-Channel MOSFET (ON Semiconductor)
  • FQI8N60C - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI3N60-like datasheet