Datasheet4U Logo Datasheet4U.com

FQI28N15 150V N-Channel MOSFET

FQI28N15 Description

FQB28N15 / FQI28N15 December 2000 QFET FQB28N15 / FQI28N15 150V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI28N15 Features

* 28A, 150V, RDS(on) = 0.09Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " "

📥 Download Datasheet

Preview of FQI28N15 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FQI27N25TU-F085 - N-Channel MOSFET (ON Semiconductor)
  • FQI1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQI4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQI4N65 - 4A N-Channel MOSFET (Oucan Semi)
  • FQI5N60C - N-Channel MOSFET (ON Semiconductor)
  • FQI7N60 - N-Channel MOSFET (ON Semiconductor)
  • FQI8N60C - N-Channel MOSFET (ON Semiconductor)

📌 All Tags

150V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor FQI28N15-like datasheet