FQI17P06 Datasheet (Fairchild Semiconductor)

FQI17P06, 60V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse

FQI17P06 Features

* -17A, -60V, RDS(on) = 0.12Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !