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FQI17P06 60V P-Channel MOSFET

FQI17P06 Description

FQB17P06 / FQI17P06 May 2001 QFET FQB17P06 / FQI17P06 60V P-Channel MOSFET General .
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI17P06 Features

* -17A, -60V, RDS(on) = 0.12Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 80 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D G! G S !

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60V P-Channel MOSFET Fairchild Semiconductor
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