FQI15P12 Datasheet (Fairchild Semiconductor)

FQI15P12, 120V P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQI15P12 Features

* -15A, -120V, RDS(on) = 0.2Ω @VGS = -10 V

* Low gate charge ( typical 29 nC)

* Low Crss ( typical 110 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating D GS D2-PAK FQB Serie