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FQI12N20L 200V LOGIC N-Channel MOSFET

FQI12N20L Description

FQB12N20L / FQI12N20L February 2001 FQB12N20L / FQI12N20L 200V LOGIC N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQI12N20L Features

* 11.6A, 200V, RDS(on) = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability Low level gate drive requirement allowing direct opration from logi

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Datasheet Details

Part number
FQI12N20L
Manufacturer
Fairchild Semiconductor
File Size
607.28 KB
Datasheet
FQI12N20L_FairchildSemiconductor.pdf
Description
200V LOGIC N-Channel MOSFET

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200V LOGIC N-Channel MOSFET Fairchild Semiconductor
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