FQH8N100C Datasheet (Fairchild Semiconductor)

FQH8N100C, MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQH8N100C Features

* 8 A, 1000 V, RDS(on) = 1.45 Ω (Max.) @ VGS = 10 V

* Low Gate Charge (Typ. 53 nC)

* Low Crss (Typ. 16 pF)

* Fast Switching

* 100% Avalanche Tested

* Improved dv/dt Capability

* RoHS Compliant D G D S TO-247 G Absolute Maximum Ratings TC =