FQD7P20 Datasheet (Fairchild Semiconductor)

FQD7P20, 200V P-Channel MOSFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQD7P20 Features

* -5.7 A, -200 V, RDS(on) = 690 mΩ (Max.) @ VGS = -10 V, ID = -2.85 A

* Low Gate Charge (Typ. 19 nC)

* Low Crss (Typ. 25 pF)

* 100% Avalanche Tested S D G G S D-PAK D Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 6 6 + ; 6 ;