FQD19N10L

The FQD19N10L is N-Channel MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Part number	FQD19N10L
Manufacturer	Fairchild Semiconductor
File Size	1.32 MB
Description	N-Channel MOSFET
Datasheet	FQD19N10L_FairchildSemiconductor.pdf
Additional preview pages of the FQD19N10L datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

15.6 A, 100 V, RDS(on) = 100 mΩ (Max. ) @ VGS = 10 V.
Low Gate Charge (Typ. 14 nC).
Low Crss (Typ. 35 pF).
100% Avalanche Tested D D G S D-PAK G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current.

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Published: Apr 1, 2005 |