FQD17N08

The FQD17N08 is 80V N-Channel MOSFET designed by Fairchild Semiconductor.

Product Overview

Fairchild Semiconductor

Part number	FQD17N08
Manufacturer	Fairchild Semiconductor
File Size	595.27 KB
Description	80V N-Channel MOSFET
Datasheet	FQD17N08_FairchildSemiconductor.pdf
Additional preview pages of the FQD17N08 datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

12.9A, 80V, RDS(on) = 0.115Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 28 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

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Published: Apr 1, 2005 |