FQB33N10L - N-Channel MOSFET

Fairchild Semiconductor

The FQB33N10L by Fairchild Semiconductor is a N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	FQB33N10L
Manufacturer	Fairchild Semiconductor
File Size	905.57 KB
Description	N-Channel MOSFET
Datasheet	FQB33N10L_FairchildSemiconductor.pdf
Additional preview pages of the FQB33N10L datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V, ID = 16.5 A.
Low Gate Charge (Typ. 30 nC).
Low Crss (Typ. 70 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating D D GS D2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) G.

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Published: Apr 1, 2005 |