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FQB16N25C - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V.
  • Low gate charge ( typical 41nC).
  • Low Crss ( typical 68pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability ®.

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www.DataSheet4U.com FQB16N25C/FQI16N25C 250V N-Channel MOSFET June 2006 QFET FQB16N25C/FQI16N25C 250V N-Channel MOSFET Features • 15.6A, 250V, RDS(on) = 0.27 Ω @VGS = 10 V • Low gate charge ( typical 41nC) • Low Crss ( typical 68pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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