FQAF19N60 600V N-Channel MOSFET

Fairchild Semiconductor

Description

FQAF19N60 April 2000 QFET FQAF19N60 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

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Datasheet Specifications

Part number: FQAF19N60
Manufacturer: Fairchild Semiconductor
File Size: 526.05 KB
Datasheet: FQAF19N60_FairchildSemiconductor.pdf
Description: 600V N-Channel MOSFET

Features

* 11.2A, 600V, RDS(on) = 0.38 Ω @ VGS = 10 V Low gate charge ( typical 70 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratin

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FQAF19N60 600V N-Channel MOSFET Fairchild Semiconductor

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