FQAF19N60 - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQAF19N60
Manufacturer	Fairchild ↗ Semiconductor
File Size	526.05 KB
Description	600V N-Channel MOSFET
Datasheet	FQAF19N60_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

11.2A, 600V, RDS(on) = 0.38 Ω @ VGS = 10 V Low gate charge ( typical 70 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G D S ! " " " TO-3PF FQAF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain C.

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Published: Apr 1, 2005 |