FQA7N90M Datasheet (Fairchild Semiconductor)

FQA7N90M, 900V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQA7N90M Features

* 7A, 900V, RDS(on) = 1.8Ω @VGS = 10 V Low gate charge ( typical 40 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

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* G! TO-3P G DS FQA Series ! S Absolute Maximum R