Datasheet Details
| Part number | FQA65N20 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 623.15 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet |
 FQA65N20 Datasheet
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Features
- 65A, 200V, RDS(on) = 0.032Ω @VGS = 10 V Low gate charge ( typical 170 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series TC = 25°C unless otherwise noted ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current -.