FQA32N20C - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FQA32N20C
Manufacturer	Fairchild Semiconductor
File Size	2.67 MB
Description	N-Channel MOSFET
Datasheet	FQA32N20C Datasheet
Additional preview pages of the FQA32N20C datasheet.

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

32 A, 200 V, RDS(on) = 82 mΩ (Max. ) @ VGS = 10 V, ID = 16 A.
Low Gate Charge (Typ. 82.5 nC).
Low Crss (Typ. 185 pF).
100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalan.

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Published: Oct 13, 2015 |