FQA19N60 - 600V N-Channel MOSFET

Fairchild Semiconductor

Datasheet Details

Part number	FQA19N60
Manufacturer	Fairchild Semiconductor
File Size	1.42 MB
Description	600V N-Channel MOSFET
Datasheet	FQA19N60_FairchildSemiconductor.pdf

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

18.5 A, 600 V, RDS(on) = 380 mΩ (Max. ) @ VGS = 10 V, ID = 9.3 A.
Low Gate Charge (Typ. 70 nC).
Low Crss (Typ. 35 pF).
100% Avalanche Tested D G DS TO-3PN G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Rep.

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Published: Apr 1, 2005 |