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FQA13N80 - 800V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V.
  • Low gate charge ( typical 68 nC).
  • Low Crss ( typical 30pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability September 2006 QFET ®.

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Full PDF Text Transcription (Reference)

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FQA13N80 800V N-Channel MOSFET FQA13N80 800V N-Channel MOSFET Features • 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V • Low gate charge ( typical 68 nC) • Low Crss ( typical 30pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability September 2006 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
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